MOS FIELD EFFECT TRANSISTOR
SWITCHING
DESCRIPTION
The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications.
• Low on-state resistance
• Low input capacitance
ORDERING INFORMATION
LEAD PLATING
2SK4145-S19-AY Note
Tube 50 p/tube
Note Pb-free (This product does not contain Pb in the external electrode).
TO-220 typ. 1.9 g
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
ID(DC)
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Energy Note2
IAS
60
±84
84
150
32
V
A
W
°C
A
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
Channel to Case Thermal Resistance
Rth(ch-C)
1.49
°C/W
The information in this document is subject to change without notice. Before using this document, please
Not all products and/or types are available in every country. Please check with an NEC Electronics
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Date Published June 2007 NS
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